N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · Auotmobile Convert System · Networking DC-DC Power System

文件：320.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL POWER MOSFET TRANSISTOR

文件：334.62 Kbytes 頁數(shù)：6 Pages

THINKISEMI

思祁半導體

N-Channel 60-V (D-S) MOSFET

文件：979.17 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

絲?。?strong>P55NF06；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

文件：797.49 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL POWER MOSFET TRANSISTOR

ThinkiSemi

思祁半導體

絲?。?strong>P55NF06；Package：TO-220；N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：543.12 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

文件：797.49 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件：337.38 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/p55nf06fp/marking.html">P55NF06FP；Package：TO-220；N-channel 60 V, 0.015 Ω, 50 A STripFET? II Power MOSFET in D2PAK, TO-220 and TO-220FP packages

Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converter

文件：797.49 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體

絲印：P55NF06FP；Package：TO-220FP；N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：543.12 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體