絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Battery Management Application ? Power Management Functions ? DC-DC Converters

文件：464.72 Kbytes 頁數(shù)：8 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Battery Management Application ? Power Management Functions ? DC-DC Converters

文件：464.72 Kbytes 頁數(shù)：8 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Battery Management Application ? Power Management Functions ? DC-DC Converters Features and Benef

文件：397.38 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Battery Management Application ? Power Management Functions ? DC-DC Converters Features and Benef

文件：397.38 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：P0；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

文件：558.84 Kbytes 頁數(shù)：11 Pages

RENESAS

瑞薩

絲?。?strong>P0；Package：SOT-23-3；N- Enhancement Mode Field Effect Transistor

文件：3.57508 Mbytes 頁數(shù)：7 Pages

PJSEMI

平晶半導(dǎo)體

絲?。?strong>P0；Package：DSBGA；2.8 V to 22 V Priority Power MUX with Seamless Switchover

文件：1.61375 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?strong>P0；Package：DSBGA；2.8-V to 22-V Priority Power MUX with Seamless Switchover

文件：2.66823 Mbytes 頁數(shù)：40 Pages

TI

德州儀器

絲印：p00；Package：SOT765-1；Low-power dual 2-input NAND gate

1. General description The 74AUP2G00 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption acr

文件：302.02 Kbytes 頁數(shù)：20 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/p00/marking.html">p00；Package：SOT765-1；Low-power dual 2-input NAND gate

1. General description The 74AUP2G00-Q100 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumptio

文件：223.57 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世