絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Battery Management Application ? Power Management Functions ? DC-DC Converters

文件：464.72 Kbytes 頁數：8 Pages

DIODES

美臺半導體

絲印：P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Battery Management Application ? Power Management Functions ? DC-DC Converters

文件：464.72 Kbytes 頁數：8 Pages

DIODES

美臺半導體

絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Battery Management Application ? Power Management Functions ? DC-DC Converters Features and Benef

文件：397.38 Kbytes 頁數：7 Pages

DIODES

美臺半導體

絲?。?strong>P0；Package：U-DFN2020-6；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Battery Management Application ? Power Management Functions ? DC-DC Converters Features and Benef

文件：397.38 Kbytes 頁數：7 Pages

DIODES

美臺半導體

絲?。?strong>P0；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

文件：558.84 Kbytes 頁數：11 Pages

RENESAS

瑞薩

絲?。?strong>P0；Package：SOT-23-3；N- Enhancement Mode Field Effect Transistor

文件：3.57508 Mbytes 頁數：7 Pages

PJSEMI

平晶半導體

絲印：P0；Package：DSBGA；2.8 V to 22 V Priority Power MUX with Seamless Switchover

文件：1.61375 Mbytes 頁數：29 Pages

TI

德州儀器

絲印：P0；Package：DSBGA；2.8-V to 22-V Priority Power MUX with Seamless Switchover

文件：2.66823 Mbytes 頁數：40 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/p00/marking.html">p00；Package：SOT765-1；Low-power dual 2-input NAND gate

1. General description The 74AUP2G00 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption acr

文件：302.02 Kbytes 頁數：20 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/p00/marking.html">p00；Package：SOT765-1；Low-power dual 2-input NAND gate

1. General description The 74AUP2G00-Q100 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumptio

文件：223.57 Kbytes 頁數：13 Pages

NEXPERIA

安世