絲?。?a target="_blank" title="Marking" href="/08nw/marking.html">08NW；Package：WDFNW8；MOSFET - Power, Single N-Channel 40 V, 7.1 m, 48 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVTFWS008N04C ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：216.97 Kbytes 頁數(shù)：8 Pages

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絲?。?a target="_blank" title="Marking" href="/n10w/marking.html">N10W；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVTFWS010N10MCLTAG ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：332.08 Kbytes 頁數(shù)：7 Pages

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安森美半導體

絲?。?a target="_blank" title="Marking" href="/014w/marking.html">014W；Package：WDFN8；MOSFET ??Power, Single, P-Channel -40 V, 13.8 m, -49 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVTFWS014P04M8L ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR?Free and are Ro

文件：229.69 Kbytes 頁數(shù)：7 Pages

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安森美半導體

絲?。?a target="_blank" title="Marking" href="/15nw/marking.html">15NW；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 17.3 m, 27 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVTFWS015N04C ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：209.14 Kbytes 頁數(shù)：7 Pages

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安森美半導體

絲印：15PW；Package：WDFN8；MOSFET - Power, Single P-Channel, 8FL -30 V, 7.5 m, -88.6 A

Features ? Ultra Low RDS(on) to Improve System Efficiency ? Advanced Package Technology in 3.3 x 3.3 mm for Space Saving and Excellent Thermal Conduction ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ?

文件：260.43 Kbytes 頁數(shù)：8 Pages

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安森美半導體

絲?。?a target="_blank" title="Marking" href="/16nw/marking.html">16NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fr

文件：280.43 Kbytes 頁數(shù)：8 Pages

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安森美半導體

絲印：20NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fr

文件：280.16 Kbytes 頁數(shù)：8 Pages

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安森美半導體

絲?。?a target="_blank" title="Marking" href="/24nw/marking.html">24NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS024N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fre

文件：283.2 Kbytes 頁數(shù)：8 Pages

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安森美半導體

絲?。?a target="_blank" title="Marking" href="/27w1/marking.html">27W1；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? NVTFWS027N10MCL ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：226.43 Kbytes 頁數(shù)：8 Pages

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安森美半導體

絲印：30NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fre

文件：281.65 Kbytes 頁數(shù)：8 Pages

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安森美半導體