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    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    NVTFS020N06C
    MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fr
    文件：280.16 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS020N06CTAG
    絲?。?a target="_blank" title="Marking" href="/20nc/marking.html">20NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fr
    文件：280.16 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS024N06C
    MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS024N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
    文件：283.2 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS024N06CTAG
    絲?。?a target="_blank" title="Marking" href="/24nc/marking.html">24NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS024N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
    文件：283.2 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS027N10MCL
    MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFWS027N10MCL ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
    文件：226.43 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS027N10MCLTAG
    絲?。?a target="_blank" title="Marking" href="/27l1/marking.html">27L1；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 26 m, 28 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFWS027N10MCL ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
    文件：226.43 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS030N06C
    MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
    文件：281.65 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS030N06CTAG
    絲?。?a target="_blank" title="Marking" href="/30nc/marking.html">30NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
    文件：281.65 Kbytes 頁(yè)數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS052P04M8L
    MOSFET - Power, Single P-Channel -40 V, 69 m, -13.2 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFWS052P04M8L ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR?Free and are Ro
    文件：218.14 Kbytes 頁(yè)數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS052P04M8LTAG
    絲印：052M；Package：WDFN8；MOSFET - Power, Single P-Channel -40 V, 69 m, -13.2 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFWS052P04M8L ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR?Free and are Ro
    文件：218.14 Kbytes 頁(yè)數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • 接口類型：
      2-Wire
    • 產(chǎn)品：
      Sensor with Alarm
    • 說(shuō)明：
      板上安裝溫度傳感器 TEMP SENSOR
    • 最大工作溫度：
      + 127 C
    • 最小工作溫度：
      0 C
    • 封裝 / 箱體：
      MSOP-8
    • 封裝：
      Reel
    • 系列：
      NVT210
    • 商標(biāo)：
      ON Semiconductor
    • 安裝風(fēng)格：
      SMD/SMT
    • 工作電源電流：
      240 uA
    • 工廠包裝數(shù)量：
      3000
    • 電源電壓-最大：
      3.6 V
    • 電源電壓-最?。?/span>
      2.8 V
    • 輸出類型：
      Digital
    • 子類別：
      Sensors
    • 產(chǎn)品類型：
      Temperature Sensors
    • 資格：
      AEC-Q100
    • 分辨率：
      8 bit
    • 關(guān)閉：
      Shutdown
    • 配置：
      Local
    
            
    
        
    
            
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