| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>NVB；Package：Micro8；Programmable Precision References The TL431A, B integrated circuits are three?terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These devices exhibit a wide operating current ra 文件：471.08 Kbytes 頁數(shù)：22 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvb072n65s3/marking.html">NVB072N65S3；Package：D2PAK-3；MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A Description SuperFET III MOSFET is onsemi’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superi 文件：227.18 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvb082n65s3f/marking.html">NVB082N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr 文件：242.11 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：NVB095N65S3F；Package：D2PAK；MOSFET ??Power, N??hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m Description SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro 文件：244.2 Kbytes 頁數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：NVB110N65S3F；Package：D2PAK；MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr 文件：242.93 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvb150n65s3f/marking.html">NVB150N65S3F；Package：D2PAK；MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A Description SUPERFET? III MOSFET is onsemi’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide supe 文件：230.26 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvb190n65s3f/marking.html">NVB190N65S3F；Package：D2PAK；MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr 文件：259.39 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvbg020120sc1/marking.html">NVBG020120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (typ. QG(tot) = 220 nC) ? Low Effective Output Capacitance (typ. Coss = 258 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second leve 文件：323.84 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：NVBG040120SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second leve 文件：307 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nvbgs6d5n15/marking.html">NVBGS6D5N15；Package：D2PAK7；MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Lowers Switching Noise/EMI ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Tools, Battery 文件：417.33 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
詳細(xì)參數(shù)
- 型號：
NVB
- 功能描述：
基準(zhǔn)電壓& 基準(zhǔn)電流 ANA 2.5V PROG SHUNT REF
- RoHS：
否
- 制造商：
STMicroelectronics
- 產(chǎn)品：
Voltage References
- 拓?fù)浣Y(jié)構(gòu)：
Shunt References
- 參考類型：
Programmable
- 輸出電壓：
1.24 V to 18 V
- 初始準(zhǔn)確度：
0.25 %
- 平均溫度系數(shù)（典型值）：
100 PPM/C 串聯(lián) VREF -
- 輸入電壓（最大值）：
串聯(lián) VREF -
- 分流電流（最大值）：
60 mA
- 最大工作溫度：
+ 125 C
- 封裝/箱體：
SOT-23-3L
- 封裝：
Reel
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
標(biāo)準(zhǔn)封裝 |
7858 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
ONSEMI/安森美 |
25+ |
MSOP8 |
18161 |
ONSEMI/安森美原裝特價NCV431BVDMR2G即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ON |
25+ |
MICRO-8 |
18600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ON(安森美) |
23+ |
9958 |
公司只做原裝正品,假一賠十 |
詢價 | |||
ON |
MICRO-8 |
1200 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
ON |
2016+ |
MSOP8 |
1980 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ONSemiconductor |
24+ |
Micro8? |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ON Semiconductor |
24+ |
Micro8? |
65200 |
一級代理/放心采購 |
詢價 | ||
ON/安森美 |
2447 |
MSOP8 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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