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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NCV431BVDMR2G

          絲?。?strong>NVB;Package:Micro8;Programmable Precision References

          The TL431A, B integrated circuits are three?terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These devices exhibit a wide operating current ra

          文件:471.08 Kbytes 頁數(shù):22 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB072N65S3

          絲?。?a target="_blank" title="Marking" href="/nvb072n65s3/marking.html">NVB072N65S3;Package:D2PAK-3;MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A

          Description SuperFET III MOSFET is onsemi’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superi

          文件:227.18 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB082N65S3F

          絲?。?a target="_blank" title="Marking" href="/nvb082n65s3f/marking.html">NVB082N65S3F;Package:D2PAK;MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A

          Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

          文件:242.11 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB095N65S3F

          絲?。?a target="_blank" title="Marking" href="/nvb095n65s3f/marking.html">NVB095N65S3F;Package:D2PAK;MOSFET ??Power, N??hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

          Description SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

          文件:244.2 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB110N65S3F

          絲?。?a target="_blank" title="Marking" href="/nvb110n65s3f/marking.html">NVB110N65S3F;Package:D2PAK;MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

          Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

          文件:242.93 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB150N65S3F

          絲?。?a target="_blank" title="Marking" href="/nvb150n65s3f/marking.html">NVB150N65S3F;Package:D2PAK;MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A

          Description SUPERFET? III MOSFET is onsemi’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide supe

          文件:230.26 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVB190N65S3F

          絲?。?a target="_blank" title="Marking" href="/nvb190n65s3f/marking.html">NVB190N65S3F;Package:D2PAK;MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK

          Description SUPERFET? III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

          文件:259.39 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVBG020N120SC1

          絲?。?a target="_blank" title="Marking" href="/nvbg020120sc1/marking.html">NVBG020120SC1;Package:D2PAK-7L;Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (typ. QG(tot) = 220 nC) ? Low Effective Output Capacitance (typ. Coss = 258 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second leve

          文件:323.84 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVBG040N120SC1

          絲?。?a target="_blank" title="Marking" href="/nvbg040120sc1/marking.html">NVBG040120SC1;Package:D2PAK-7L;Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second leve

          文件:307 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NVBGS6D5N15MC

          絲?。?a target="_blank" title="Marking" href="/nvbgs6d5n15/marking.html">NVBGS6D5N15;Package:D2PAK7;MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A

          Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Lowers Switching Noise/EMI ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Power Tools, Battery

          文件:417.33 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          詳細參數(shù)

          • 型號:

            NVB

          • 功能描述:

            基準電壓& 基準電流 ANA 2.5V PROG SHUNT REF

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 產(chǎn)品:

            Voltage References

          • 拓撲結(jié)構(gòu):

            Shunt References

          • 參考類型:

            Programmable

          • 輸出電壓:

            1.24 V to 18 V

          • 初始準確度:

            0.25 %

          • 平均溫度系數(shù)(典型值):

            100 PPM/C 串聯(lián) VREF -

          • 輸入電壓(最大值):

            串聯(lián) VREF -

          • 分流電流(最大值):

            60 mA

          • 最大工作溫度:

            + 125 C

          • 封裝/箱體:

            SOT-23-3L

          • 封裝:

            Reel

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ON(安森美)
          24+
          標準封裝
          7858
          全新原裝正品/價格優(yōu)惠/質(zhì)量保障
          詢價
          ONSEMI/安森美
          25+
          MSOP8
          18161
          ONSEMI/安森美原裝特價NCV431BVDMR2G即刻詢購立享優(yōu)惠#長期有貨
          詢價
          ON
          25+
          MICRO-8
          18600
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          ON(安森美)
          23+
          9958
          公司只做原裝正品,假一賠十
          詢價
          ON
          MICRO-8
          1200
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          ON
          2016+
          MSOP8
          1980
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          ONSemiconductor
          24+
          Micro8?
          66800
          原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
          詢價
          ON Semiconductor
          24+
          Micro8?
          65200
          一級代理/放心采購
          詢價
          ON/安森美
          2447
          MSOP8
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          更多NVB供應(yīng)商 更新時間2026-1-19 13:41:00
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