絲印：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features ? Advanced Source?Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction ? Ultra Low RDS(on) to Improve System Efficiency ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Ap

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安森美半導(dǎo)體

MOSFET - PowerTrench? T10, Single, N-Channel, Source Down, WDFN9, 25 V, 0.72 mΩ, 276 A

The latest 25V power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness beha

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安森美半導(dǎo)體

MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features ? Excellent Thermal Conduction by Advanced Source?Down Center Gate Dual?Cooling Package Technology (3.3 x 3.3 mm) ? Ultra Low RDS(on) to Improve System Efficiency ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and

文件：431.55 Kbytes 頁(yè)數(shù)：8 Pages

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安森美半導(dǎo)體

原廠原封

ON

上傳：深圳科宇泰科技有限公司

SOT-963

ON

上傳：深圳市粵駿騰電子科技有限公司