MOSFET - Power, Single N-Channel 80 V, 9 m, 58 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? These Devices are Pb?Free and are RoHS Compliant

文件：343.07 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲印：009N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 9 m, 58 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? These Devices are Pb?Free and are RoHS Compliant

文件：343.07 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single,?N-Channel,?80 V, 9 mΩ, 58 A

Commercial Power MOSFET in a 3x3mm flat lead package as LFPAK33 designed for compact and efficient designs and including high thermal performance. ? Low RDS(on) to Minimize Conduction Losses\n? Low Capacitance to Minimize Driver Losses\n? Small Footprint (3.3 x 3.3mm)\n? These Devices are Pb?Free and are RoHS Compliant\n? Logic Level 5V drive capable\n;

ONSEMI

安森美半導(dǎo)體

原廠原封

ON

上傳：深圳科宇泰科技有限公司

SOT-963

ON

上傳：深圳市粵駿騰電子科技有限公司