Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE

PIN

Description:\nThe NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications.Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)\nReverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) 25 Amp, TO48

Silicon Controlled Rectifier (SCR), 25A

文件：57.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR), 25A

Silicon Controlled Rectifier (SCR), 25A

文件：18.98 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5536 is a silicon controlled rectifier (SCR) in a TO220 type package designed for use as back–to–back SCR output devices for solid state relays or applications requiring high surge operation. Features: ? 400A Surge Capability ? 800V Blocking Voltage

文件：20.02 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 800VDRM, 50A

Description: The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive loads. Features: Glass Passivated Chip High Stability and Reliability High Surge Capability High On–State Current Easy Mounting on Heatsink Isolated Package: In

文件：23.22 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 55 Amps

Features: ? High Voltage Capability ? High Surge Capability ? Glass Passivated Chip

文件：19.36 Kbytes 頁數(shù)：2 Pages

NTE

SCRs

NTE

SCRs

NTE