Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV

Description: The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal amplifier and also used in applications requiring fast switching times. Features: ● High Current–Gain Bandwidth Product ● Low Noise Figure ● High Power Gain

文件：22.02 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit NMOS, 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC

Description: The NTE6507 integrated circuit is an 8 bit microprocessor in a 28–Lead DIP type package which provides a selection of addressable memory range, interrupt input options, and on–chip clock oscillators and drivers. This device is bus compatible with the MC6800 product offering and is ai

文件：35.84 Kbytes 頁數(shù)：4 Pages

NTE

Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowi

文件：37.57 Kbytes 頁數(shù)：4 Pages

NTE

Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data

文件：30.81 Kbytes 頁數(shù)：4 Pages

NTE

Bi-Polar transistor Selector Guide

NTE

Integrated Circuit CMOS, 1K Static RAM (SRAM)

NTE

Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

NTE