Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: ? Uniform Low–Level Noise–Immune Gate T

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NTE

Phase Control SCRs

NTE

Single N??hannel Power MOSFET

文件：114.14 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES ? Low noise ? Interchangeability of drain and source connections ? High gain.

文件：96 Kbytes 頁數(shù)：10 Pages

PHI

PHI