0.3??Single Digit Numeric Display, Seven Segment, Common Cathode

Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) height single digit, seven segment, common cathode displays. The NTE3056 and NTE3057 utilize LED chips which are made from GaAsP on a GaAs substrate. The NTE3059 utilizes LED chips which are made from GaP on a transparent GaP substrat

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NTE

0.3 Single Digit Numeric Display, Seven Segment, Common Cathode

Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) height single digit, seven segment, common cathode displays. The NTE3056 and NTE3057 utilize LED chips which are made from GaAsP on a GaAs substrate. The NTE3059 utilizes LED chips which are made from GaP on a transparent GaP substrat

文件：23.81 Kbytes 頁數(shù)：3 Pages

NTE

4096-Bit EEPROM

[ITT Semiconductors] Introduction Electrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each. The NVM 3060 is intended for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/300

文件：577.19 Kbytes 頁數(shù)：13 Pages

ETCList of Unclassifed Manufacturers

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Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intend

文件：31.53 Kbytes 頁數(shù)：5 Pages

PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package. FEATURES ? Low forward volt drop ? Fast

文件：46.4 Kbytes 頁數(shù)：5 Pages

PHI

PHI