0.4??Single Digit Numeric Display Seven Segment, RHDP

Description: The NTE3068 through NTE3071 are 0.4 inch (10.16mm) height single digit displays. The NTE3068 and NTE3069 devices utilize LED chips which are made from GaP on a transparent GaP substrate. The NTE3070 and NTE3071 devices utilize chips which are made from GaAsP on a transparent GaP subs

文件：23.31 Kbytes 頁數(shù)：3 Pages

NTE

0.560 Inch, Seven Segment, 1 Digit w/Overflow and , Common Anode, RHDP

Features: High Performance GaAsP Large, easy to read digits Fast switching ? excellent for multiplexing Low power consumption Solid state reliability ? long operation life Rugged plastic construction Directly compatible with integrated circuits High brightness with high con

文件：72.96 Kbytes 頁數(shù)：3 Pages

NTE

0.56??Single Digit Numeric Display Seven Segment, RHDP

Description: The NTE3078 (Common Anode) and NTE3079 (Common Cathode) are 0.56 inch (14.2mm) height single digit displays utilizing LED chips which are made from GaAsP on a GaAs substrate. Features: ? 0.56 Inch (14.2mm) Digit Height ? Low Power Requirement ? Excellent Characters Ap

文件：25.82 Kbytes 頁數(shù)：2 Pages

NTE

0.56??Single Digit Numeric Display Seven Segment, RHDP

Description: The NTE3078 (Common Anode) and NTE3079 (Common Cathode) are 0.56 inch (14.2mm) height single digit displays utilizing LED chips which are made from GaAsP on a GaAs substrate. Features: ? 0.56 Inch (14.2mm) Digit Height ? Low Power Requirement ? Excellent Characters Ap

文件：25.82 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

文件：22.41 Kbytes 頁數(shù)：2 Pages

NTE

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

文件：24.36 Kbytes 頁數(shù)：2 Pages

NTE

Optoisolator NPN Darlington Transistor Output

Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

文件：23.17 Kbytes 頁數(shù)：2 Pages

NTE

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: ? High Sensitivity: 1mA on the Input will Sink a TTL gate ? High Isolation: 3550VDC, 1012?, 0.5pF

文件：25.11 Kbytes 頁數(shù)：2 Pages

NTE

Optoisolater NPN Photo Darlington Output

Features: ● High Isolation Voltage–7500V

文件：18.94 Kbytes 頁數(shù)：1 Pages

NTE

Optoisolator Photon Coupled Bilateral Analog FET

Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals.

文件：24.5 Kbytes 頁數(shù)：2 Pages

NTE