Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

文件：21.47 Kbytes 頁數：2 Pages

NTE

Phototransistor Silicon NPN Photo Darlington Light Detector

Description: The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for use in applications such as industrial inspection, processing and control, counter, sorters, switching and logic circuit or any design requiring very high radiation sensitivity at low lig

文件：20.12 Kbytes 頁數：2 Pages

NTE

Silicon NPN Phototransistor Detector

Description: The NTE3037 is designed for counters, Industrial and process control, sorters, switching and logic controls. This device is packaged in a TO–18 case with domed glass lid. Features: ? High Sensitivity ? Base Contact Externally Available ? Saturation Level Directly Comp

文件：18.29 Kbytes 頁數：2 Pages

NTE

Phototransistor Silicon, NPN, Visible

Features: ● High Sensitivity: IL = 1mA (Typ) ● Small Size ● Saturation Level Directly Compatible with Most TTL Applications: ● Optical Switch ● Position Sensor ● Tape, Card Readers

文件：80.95 Kbytes 頁數：2 Pages

NTE

Silicone Heat Sink Compound

Silicone Heat Sink Compound

文件：45.83 Kbytes 頁數：5 Pages

NTE

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

文件：20.63 Kbytes 頁數：2 Pages

NTE

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

文件：24.02 Kbytes 頁數：3 Pages

NTE

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

文件：21.58 Kbytes 頁數：2 Pages

NTE

Optoisolator NPN Transistor Output

Description: The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 4–Lead DIP type package. Features: ● High Output Voltage: V(BR)CEO = 80V ● Controlled Current Transfer Ratio ● Maximum Sp

文件：23.6 Kbytes 頁數：3 Pages

NTE

Optoisolator NPN Darlington Transistor Output

Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current. Features:

文件：29.95 Kbytes 頁數：3 Pages

NTE