Integrated Circuit NMOS, 64K Erasable EPROM, 200ns

Description: The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and of

文件：33.2 Kbytes 頁(yè)數(shù)：5 Pages

NTE

Silicon NPN Transistor Broadband RF Amp

Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: ? Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz ? High Current–Gain

文件：23.1 Kbytes 頁(yè)數(shù)：2 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁(yè)數(shù)：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Germanium Transistors

NTE

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description:\nThe NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. Al

NTE

Complementary Transistors

NTE