Germanium PNP Transistor High Current, High Gain Amp

Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages.

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NTE

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: ? High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V ? Collec

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NTE

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits

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NTE

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: ? High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V ? Collec

文件：24.87 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Integrated Circuit NMOS, 16K UV Erasable PROM

Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package a

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NTE

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: ? High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC

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NTE

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: ? High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC

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NTE

Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM

Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is i

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NTE

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: ? High DC Current Gain: hFE = 3000 Typ @ IC = 2A ? Low Collect

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NTE

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: ? High DC Current Gain: hFE = 3000 Typ @ IC = 2A ? Low Collect

文件：25.78 Kbytes 頁(yè)數(shù)：2 Pages

NTE