Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

文件：22.79 Kbytes 頁數(shù)：2 Pages

NTE

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES ? 300 mW total power dissipation ? Very small 1.6 x 1.2 mm ultra thin package ? Excellent coplanarity due to straight leads ? Low collector-emitter saturation voltage ? High

文件：69.97 Kbytes 頁數(shù)：12 Pages

PHI

PHI

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：242.93 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

Lowpass Filter

文件：23.79 Kbytes 頁數(shù)：2 Pages

KR

60 MHz (2511/2515) and 100 MHz (2512/2516) bandwidth

文件：474 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes 頁數(shù)：60 Pages

ABBATRON