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    首頁 >PBSS2515>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PBSS2515

    15 V low VCEsat NPN double transistor

    DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES ? 300 mW total power dissipation ? Very small 1.6 x 1.2 mm ultra thin package ? Excellent coplanarity due to straight leads ? Low collector-emitter saturation voltage ? High

    文件:69.97 Kbytes 頁數(shù):12 Pages

    PHI

    PHI

    PHI

    PBSS2515

    15 V low VCEsat NPN double transistor

    恩XP

    恩XP

    PBSS2515E

    絲?。?a target="_blank" title="Marking" href="/1q/marking.html">1Q;Package:SC-75;15 V, 0.5 A NPN low VCEsat (BISS) transistor

    Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

    文件:242.93 Kbytes 頁數(shù):13 Pages

    NEXPERIA

    安世

    PBSS2515E

    15 V, 0.5 A NPN low VCEsat (BISS) transistor

    General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current g

    文件:128.07 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    PBSS2515F

    15 V low VCEsat NPN transistor

    DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES ? Low collector-emitter saturation voltage ? High current capabilities ? Improved thermal behaviour due to flat leads. APPLICATIONS ? General purpose switching and muting ? Low f

    文件:66.92 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    PBSS2515M

    15 V, 0.5 A NPN low VCEsat (BISS) transistor

    DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. FEATURES ? Low collector-emitter saturation voltage VCEsat ? High collector current capability IC and ICM ? High efficiency leading to reduced heat generation ? Reduced printed

    文件:151.01 Kbytes 頁數(shù):9 Pages

    恩XP

    恩XP

    PBSS2515M

    絲?。?a target="_blank" title="Marking" href="/s2/marking.html">S2;Package:SOT883;15 V, 0.5 A NPN low VCEsat (BISS) transistor

    FEATURES ?Low collector-emitter saturation voltage VCEsat ?High collector current capability IC and ICM ?High efficiency leading to reduced heat generation ?Reduced printed-circuit board requirements. APPLICATIONS ?Power management: –DC-DC converter –Supply line switching –Battery charg

    文件:355.63 Kbytes 頁數(shù):10 Pages

    NEXPERIA

    安世

    PBSS2515VPN

    絲?。?a target="_blank" title="Marking" href="/n8/marking.html">N8;Package:SOT666;15 V low VCE(sat) NPN/PNP transistor

    FEATURES ?300 mW total power dissipation ?Very small 1.6 × 1.2 mm ultra thin package ?Excellent coplanarity due to straight leads ?Low collector-emitter saturation voltage ?High current capability ?Improved thermal behaviour due to flat lead ?Replaces two SC75/SC89 packaged low VCEsat trans

    文件:387.31 Kbytes 頁數(shù):12 Pages

    NEXPERIA

    安世

    PBSS2515VS

    絲印:N9;Package:SOT666;15 V low VCEsat NPN double transistor

    1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits ? 300 mW total power dissipation ? Very small 1.6 x 1.2 mm ultra thin package ? Excellent coplana

    文件:201.84 Kbytes 頁數(shù):9 Pages

    NEXPERIA

    安世

    PBSS2515VS

    15 V low VCE(sat) NPN double transistor

    DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES ? 300 mW total power dissipation ? Very small 1.6 × 1.2 mm ultra thin package ? Excellent coplanarity due to straight leads ? Low collector-emitter saturation voltage ? High

    文件:149.1 Kbytes 頁數(shù):9 Pages

    恩XP

    恩XP

    技術(shù)參數(shù)

    • Package name:

      DFN1006-3

    • Size (mm):

      1 x 0.6 x 0.48

    • Polarity:

      NPN

    • Ptot (mW):

      250

    • VCEO [max] (V):

      15

    • IC [max] (mA):

      500

    • hFE [min]:

      200

    • Tj [max] (°C):

      150

    • fT [min] (MHz):

      250

    • Automotive qualified:

      N

    供應(yīng)商型號品牌批號封裝庫存備注價格
    恩XP
    23+
    SOT523
    8560
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    PHI
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    只做全新原裝真實現(xiàn)貨供應(yīng)
    詢價
    24+
    5000
    公司存貨
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    恩XP
    23+
    SOT-666
    5600
    絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
    詢價
    恩XP
    2016+
    SO3T23
    2600
    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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    恩XP
    17+
    SOT883
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    恩XP
    16+
    NA
    8800
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    詢價
    恩XP
    25+
    SOT-363
    40610
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
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    ph
    24+
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    更多PBSS2515供應(yīng)商 更新時間2026-1-23 8:03:00

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