Silicon NPN Transistor Low Voltage Output Amp

Features: ● Low Collector–Emitter Saturation Voltage ● High DC Current Gain ● An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by Taping and Magazine Packaging

文件：20.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Power Transistor Audio Power Amp, Medium Speed Switch

Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: ? DC Current Gain: hFE = 20 – 70 @ IC = 4A ? Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max

文件：24.88 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit TV Remote Control

Description: The NTE1300 is a silicon monolithic integrated circuit in an 8–Lead SIP type package designed for use as a Frequency Servo Control System for tape recorders and VCRs. Functions: ? Wave Shaping Circuit ? Sawtooth Wave Generator ? Comparator ? DC Amplifier ? Regul

文件：21.27 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit AM/FM IF

Description: The NTE1301 is a silicon monolithic integrated circuit in a 7–Lead SIP type package designed for the AM/FM IF amplifier of a radio receiver. Two differential amplifiers and an AGC circuit perform good limiting quality for FM operation and good AGC characteristics for AM operation.

文件：21.46 Kbytes 頁數(shù)：2 Pages

NTE

Germanium Complementary Transistors Audio Power Amplifier

Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.

文件：20.05 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit Vertical OSC, Amp

Description: The NTE1312 is a silicon monolithic integrated circuit in a 14–Lead DIP type package designed for use in TV vertical oscillator, sync circuits. It includes a vertical oscillator, vertical trigger and comparator amplifier.

文件：21.45 Kbytes 頁數(shù)：3 Pages

NTE

Integrated Circuit Module − 2 Power, 2 Channel AF Power Amplifier, 35W Min

Integrated Circuit Module ? 2 Power, 2 Channel AF Power Amplifier, 35W Min

文件：79.72 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit Module, Dual, AF PO, 50W

Features: ● Muting Circuit ● Reduced Heat Sink due to Case Temperature Dissipation up to +125°C

文件：77.39 Kbytes 頁數(shù)：2 Pages

NTE

Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min.

Features: ● Muting Circuit ● Reduced Heat Sink due to Case Temperature Dissipation up to +125°C

文件：23.33 Kbytes 頁數(shù)：2 Pages

NTE

Silicon N-Channel JFET Transistor VHF Amplifier, Mixer

Silicon N–Channel JFET Transistor VHF Amplifier, Mixer

文件：20 Kbytes 頁數(shù)：2 Pages

NTE