isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.24 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switch

文件：939.04 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switch

文件：987.84 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

??0 V, ??2 A, P??hannel DPAK

Power MOSFET ?60 V, ?12 A, P?Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

??0 V, ??2 A, P??hannel DPAK

Power MOSFET ?60 V, ?12 A, P?Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -60V, ID= -20A RDS(ON)

文件：912.3 Kbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

絲?。?a target="_blank" title="Marking" href="/ntd2955/marking.html">NTD2955；Package：TO-252；-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 m? (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

P-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switch

文件：985.58 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switch

文件：985.62 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體