??0 V, ??2 A, P??hannel DPAK

Power MOSFET ?60 V, ?12 A, P?Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

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ONSEMI

安森美半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -20A RDS(ON)

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BYCHIP

百域芯

-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 m? (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

Power MOSFET ??0 V, ??2 A, P??hannel DPAK

文件：112.72 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

Power MOSFET

文件：64.879 Kbytes 頁數(shù)：8 Pages

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安森美半導(dǎo)體

Power MOSFET

文件：88.01 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?strong>NTD2955；Package：TO-252；-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 m? (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

單 P 溝道，功率 MOSFET，-60V，-12A，180mΩ

This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes.Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.These devices are particularly well suited for bridge circuits where diode speed and commu ? Avalanche Energy Specified\n? IDSS and VDS(on) Specified at Elevated Temperature\n? Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes\n? RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.24 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電