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          首頁 >NP9>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NP90N055VUK_V01

          MOS FIELD EFFECT TRANSISTOR

          Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.85 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:278.27 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP90N055VUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.85 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:278.27 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP90N055VUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.85 mΩ MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:111.7 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP90N055VUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.85 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:278.27 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP90N055VUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.85 mΩ MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:111.7 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NP90N06VDK

          60 V – 90 A – N-channel Power MOS FET Application: Automotive

          Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 5.3 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application and A

          文件:442.68 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP90N06VDK

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:261.18 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NP90N06VDK_V01

          60 V – 90 A – N-channel Power MOS FET Application: Automotive

          Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 5.3 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application and A

          文件:442.68 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP90N06VDK-E1-AY

          60 V – 90 A – N-channel Power MOS FET Application: Automotive

          Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 5.3 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application and A

          文件:442.68 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP90N06VDK-E2-AY

          60 V – 90 A – N-channel Power MOS FET Application: Automotive

          Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on)1 = 5.3 m? MAX. (VGS = 10 V, ID = 45 A) ? Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ? Designed for automotive application and A

          文件:442.68 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          技術參數(shù)

          • 封裝形式:

            DFN5*6

          • Vds(V):

            30

          • ID(A)25°C:

            90

          • VGS(±V):

            20

          • Rdson@10V Typ(mΩ):

            2.5

          • [email protected] Tpy(mΩ):

            4.2

          供應商型號品牌批號封裝庫存備注價格
          RENESAS
          13+
          SOT252
          2500
          詢價
          AVD
          24+
          412
          詢價
          NEC
          24+
          TO-252
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          AavidThermalloy
          5
          全新原裝 貨期兩周
          詢價
          RENESAS
          23+
          SOT252
          8560
          受權代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          AAVIDTHERMALLOY
          23+
          NA
          318
          專做原裝正品,假一罰百!
          詢價
          RENESAS
          25+23+
          TO252
          33387
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          Renesas
          18+
          TO-252
          41200
          原裝正品,現(xiàn)貨特價
          詢價
          RENESAS
          20+
          TO-252
          63258
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          LN
          24+
          DFN56
          74114
          原裝正品現(xiàn)貨供應
          詢價
          更多NP9供應商 更新時間2026-1-20 9:31:00
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