| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ? RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) ? Low input capacitance ? Ciss 文件：237.33 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ? RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) ? Low input capacitance ? Ciss 文件：237.33 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC 文件：1.00252 Mbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC 文件：1.00251 Mbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ? RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) ? Low input capacitance ? Ciss 文件：237.33 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.16 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.8 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.11 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) ● Designed for automotive application 文件：112.37 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- 封裝形式：
DFN5*6
- Vds(V)：
30
- ID(A)25°C：
90
- VGS(±V)：
20
- Rdson@10V Typ(mΩ)：
2.5
- [email protected] Tpy(mΩ)：
4.2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS |
13+ |
SOT252 |
2500 |
詢價(jià) | |||
AVD |
24+ |
412 |
詢價(jià) | ||||
NEC |
24+ |
TO-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
AavidThermalloy |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
RENESAS |
23+ |
SOT252 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
AAVIDTHERMALLOY |
23+ |
NA |
318 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
RENESAS |
25+23+ |
TO252 |
33387 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
Renesas |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
RENESAS |
20+ |
TO-252 |
63258 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
LN |
24+ |
DFN56 |
74114 |
原裝正品現(xiàn)貨供應(yīng) |
詢價(jià) |
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