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          首頁 >NE6>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE6500379A

          3W L, S-BAND POWER GaAs MESFET

          DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

          文件:88.52 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NE6500379A

          3W, L/S-BAND MEDIUM POWER GaAs MESFET

          DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

          文件:162.42 Kbytes 頁數(shù):7 Pages

          CEL

          NE6500379A

          N-CHANNEL GaAs MES FET

          N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

          文件:219.69 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE6500379A-T1

          N-CHANNEL GaAs MES FET

          N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

          文件:219.69 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE6500379A-T1

          3W L, S-BAND POWER GaAs MESFET

          DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

          文件:88.52 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NE6500379A-T1

          3W, L/S-BAND MEDIUM POWER GaAs MESFET

          DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

          文件:162.42 Kbytes 頁數(shù):7 Pages

          CEL

          NE6500496

          4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

          SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

          文件:37.58 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          NE6500496

          GaAs MES FET

          4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES ? Class A operation ? H

          文件:196.42 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          NE6500496_00

          L&S BAND MEDIUM POWER GaAs MESFET

          DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent perf

          文件:33.32 Kbytes 頁數(shù):2 Pages

          NEC

          瑞薩

          NE650103M

          N-CHANNEL GaAs MES FET

          10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

          文件:230.89 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            NE6

          • 制造商:

            Essentra Components

          • 類別:

            電纜,電線 - 管理 > 電纜支撐與緊固件

          • 系列:

            Richco

          • 包裝:

            散裝

          • 類型:

            線夾,P 型

          • 開口尺寸:

            0.375"(9.53mm)

          • 安裝類型:

            緊固件

          • 材料:

          • 顏色:

            黑色,銀色

          • 寬度:

            0.375"(9.53mm)

          • 面板孔尺寸:

            0.204"(5.18mm)

          • 材料厚度:

            0.031"(0.80mm)

          • 特性:

            保護(hù)涂層

          • 描述:

            CBL CLAMP P-TYPE FASTENER

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Richco
          2022+
          961
          全新原裝 貨期兩周
          詢價
          Essentra
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          729
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          NE
          36118
          SOT23-3
          2015
          專業(yè)代理LDO穩(wěn)壓IC,型號齊全,公司優(yōu)勢產(chǎn)品
          詢價
          PHI
          DIP8
          87+
          40
          全新原裝進(jìn)口自己庫存優(yōu)勢
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          恩XP
          10+
          DIP16
          7800
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          PHI
          04+
          2000
          詢價
          PHI
          23+
          SO-20
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          PHI
          25+
          SSOP20
          1111
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          PHI
          00+
          SOP8
          80
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
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          NE
          24+
          DIP
          900
          原裝現(xiàn)貨假一罰十
          詢價
          更多NE6供應(yīng)商 更新時間2026-1-21 9:50:00
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