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          首頁 >NE6>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE645

          Dolby Noise Reduction Circuit

          DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

          文件:231 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          NE64535

          NPN SILICON LOW NOISE RF TRANSISTOR

          DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: ? NF = 1.6 dB Typical @ 2 GHz ? |S21E|2 = 11 dB Typical @ 2 GHz ? Hermetic Ceramic Package

          文件:18.83 Kbytes 頁數(shù):2 Pages

          ASI

          NE645N

          Dolby Noise Reduction Circuit

          DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

          文件:231 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          NE646

          Dolby Noise Reduction Circuit

          DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

          文件:231 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          NE646N

          Dolby Noise Reduction Circuit

          DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

          文件:231 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          NE6500179A

          N-CHANNEL GaAs MES FET

          1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

          文件:176.33 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE6500179A-T1

          N-CHANNEL GaAs MES FET

          1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

          文件:176.33 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE6500278

          GaAs MES FET

          2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES ? Class AB operation ? High output power: 35.5 dBm (TYP.) ? High Linear Gain: 9.0 dB (TY

          文件:192.84 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE6500278-E3

          GaAs MES FET

          2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES ? Class AB operation ? High output power: 35.5 dBm (TYP.) ? High Linear Gain: 9.0 dB (TY

          文件:192.84 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NE6500379

          3W L, S-BAND POWER GaAs MESFET

          DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

          文件:88.52 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            NE6

          • 制造商:

            Essentra Components

          • 類別:

            電纜,電線 - 管理 > 電纜支撐與緊固件

          • 系列:

            Richco

          • 包裝:

            散裝

          • 類型:

            線夾,P 型

          • 開口尺寸:

            0.375"(9.53mm)

          • 安裝類型:

            緊固件

          • 材料:

          • 顏色:

            黑色,銀色

          • 寬度:

            0.375"(9.53mm)

          • 面板孔尺寸:

            0.204"(5.18mm)

          • 材料厚度:

            0.031"(0.80mm)

          • 特性:

            保護涂層

          • 描述:

            CBL CLAMP P-TYPE FASTENER

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Richco
          2022+
          961
          全新原裝 貨期兩周
          詢價
          Essentra
          22+
          NA
          729
          加我QQ或微信咨詢更多詳細信息,
          詢價
          NE
          36118
          SOT23-3
          2015
          專業(yè)代理LDO穩(wěn)壓IC,型號齊全,公司優(yōu)勢產(chǎn)品
          詢價
          PHI
          DIP8
          87+
          40
          全新原裝進口自己庫存優(yōu)勢
          詢價
          恩XP
          10+
          DIP16
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價
          PHI
          04+
          2000
          詢價
          PHI
          23+
          SO-20
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          PHI
          25+
          SSOP20
          1111
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          PHI
          00+
          SOP8
          80
          全新原裝100真實現(xiàn)貨供應(yīng)
          詢價
          NE
          24+
          DIP
          900
          原裝現(xiàn)貨假一罰十
          詢價
          更多NE6供應(yīng)商 更新時間2026-1-17 9:50:00
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