150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：106.66 Kbytes 頁數(shù)：11 Pages

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150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：85.53 Kbytes 頁數(shù)：12 Pages

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150 mA CMOS Low Iq Low??ropout Voltage Regulator

文件：94.81 Kbytes 頁數(shù)：11 Pages

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安森美半導(dǎo)體

150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：106.66 Kbytes 頁數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

150 mA CMOS Low Iq Low??ropout Voltage Regulator

文件：94.81 Kbytes 頁數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：85.53 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

Single 2.6 A, Low-Side Gate Driver with OCP

The NCP51105 is a high current low side gate driver designed to drive Power MOSFET and IGBT. The logic input is compatible with CMOS and TTL output. The NCP51105 has OCP pin to provide over current protection with negative voltage detected across switching current sensing resistor and EN pin that be ? 2.6 A Peak Sink/Source at VDD = 15 V\n? 12.7 to 25 V Operating Range\n? Input logic compatible with wide voltage range for TTL & CMOS\n? Under voltage lockout\n? TSOP-6L package\n\n;

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1.8A 源/汲 VTT DDR 端接穩(wěn)壓器

The NCP51145 is a linear regulator designed to supply a regulated VTT termination voltage for DDR?II, DDR?III, LPDDR?III and DDR?IV memory applications. The regulator is capable of actively sourcing and sinking ±1.8 A peak currents while regulating an output voltage to within ±20 mV. The output term ? For DDR VTT Applications, Source/Sink Currents\n? Supports LPDDR?III and DDR?IV to ±1.2 A\n? Integrated Power MOSFETs\n? Fast Transient Response\n? Shutdown for Standby or Suspend Mode\n? Integrated Thermal and Current?Limit Protection;

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Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

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Package：8-DIP（0.300"，7.62mm）；包裝：卷帶（TR） 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

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安森美半導(dǎo)體