DDR 1.8 Amp Source Termination Regulator

文件：82.26 Kbytes 頁數(shù)：6 Pages

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DDR 1.8 Amp Source / Sink Termination Regulator

文件：82.95 Kbytes 頁數(shù)：6 Pages

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1.8A 源/汲 VTT DDR 端接穩(wěn)壓器

The NCP51145 is a linear regulator designed to supply a regulated VTT termination voltage for DDR?II, DDR?III, LPDDR?III and DDR?IV memory applications. The regulator is capable of actively sourcing and sinking ±1.8 A peak currents while regulating an output voltage to within ±20 mV. The output term ? For DDR VTT Applications, Source/Sink Currents\n? Supports LPDDR?III and DDR?IV to ±1.2 A\n? Integrated Power MOSFETs\n? Fast Transient Response\n? Shutdown for Standby or Suspend Mode\n? Integrated Thermal and Current?Limit Protection;

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DDR 1.8 Amp Source Termination Regulator

文件：82.26 Kbytes 頁數(shù)：6 Pages

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安森美半導(dǎo)體

DDR 1.8 Amp Source Termination Regulator

文件：82.26 Kbytes 頁數(shù)：6 Pages

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安森美半導(dǎo)體

DDR 1.8 Amp Source / Sink Termination Regulator

文件：82.95 Kbytes 頁數(shù)：6 Pages

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安森美半導(dǎo)體

DDR 1.8 Amp Source / Sink Termination Regulator

文件：82.95 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

DDR 1.8 Amp Source Termination Regulator

文件：82.26 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Package：8-VFDFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 特殊用途穩(wěn)壓器 描述：IC REG LDO DDR 1OUT 8DFN

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Package：8-SOIC（0.154"，3.90mm 寬）裸露焊盤；包裝：卷帶（TR）剪切帶（CT） 類別：集成電路（IC） 特殊用途穩(wěn)壓器 描述：IC REG LDO DDR 1OUT 8SOIC

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安森美半導(dǎo)體