| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce8290b/marking.html">NCE8290B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =90A RDS(ON) 文件：357.44 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：709.83 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ad/marking.html">NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：643.89 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ag/marking.html">NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit 文件：616.98 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ai/marking.html">NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：692.27 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ak/marking.html">NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：619.59 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce82h140/marking.html">NCE82H140；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 82V,ID =140A RDS(ON) 文件：375.16 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce82h140d/marking.html">NCE82H140D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS(ON) 文件：354.73 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce82h140ll/marking.html">NCE82H140LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G 文件：386.74 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE82H160；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =160A RDS(ON) 文件：323.01 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- 漏源電壓(Vdss)：
80V
- 連續(xù)漏極電流(Id)：
150A
- 功率(Pd)：
220W
- 閾值電壓(Vgs(th)@Id)：
3V@250uA
- 柵極電荷(Qg@Vgs)：
163nC@10V
- 輸入電容(Ciss@Vds)：
6.5nF@25V
- 反向傳輸電容(Crss@Vds)：
460pF@25V
- 工作溫度：
-55℃~+175℃@(Tj)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE |
24+ |
TO-220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NCE新潔能 |
25+23+ |
TO-220 |
17024 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
NCE |
18+ |
TSSOP-8 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE/新潔能 |
19+ROHS |
SOP-8 |
180000 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 | ||
NCE |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫 |
25+ |
TSSOP8 |
6000 |
普通 |
詢價 | ||
無錫新潔能 |
2447 |
TO-247 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE/新潔能 |
21+ |
TSSOP-8 |
330000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價 | ||
NCE/新潔能 |
21+ |
TO220 |
1709 |
詢價 |
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