| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE8295A | 絲印：NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：709.83 Kbytes 頁(yè)數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | |
絲印：NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：643.89 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ag/marking.html">NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit 文件：616.98 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：692.27 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ak/marking.html">NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：619.59 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE8295A | 絲?。?strong>NCE8295A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：709.83 Kbytes 頁(yè)數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | |
絲?。?a target="_blank" title="Marking" href="/nce8295ad/marking.html">NCE8295AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：643.89 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ag/marking.html">NCE8295AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit 文件：616.98 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE8295AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：692.27 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce8295ak/marking.html">NCE8295AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) 文件：619.59 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
25+ |
TO-220 |
32360 |
NCE/新潔能全新特價(jià)NCE8295A即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢(xún)價(jià) | ||
NCE |
2017+ |
TO-220 |
13701 |
深圳倉(cāng)庫(kù)現(xiàn)貨價(jià)格優(yōu) |
詢(xún)價(jià) | ||
NCE |
21+ |
TO-220 |
5693 |
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨! |
詢(xún)價(jià) | ||
NCE新潔能 |
21+ |
TO-220 |
25000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢(xún)價(jià) | ||
無(wú)錫新潔能 |
2447 |
TO-220-3L |
105000 |
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢(xún)價(jià) | ||
NCE |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
NCE新潔能 |
25+ |
TO-220 |
15000 |
原廠(chǎng)原裝,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
NCE |
20+ |
TO-220 |
10 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
NCE/新潔能 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢(xún)價(jià) | |||
NCE |
25+ |
TO-220 |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢(xún)價(jià) |
相關(guān)芯片絲印
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相關(guān)庫(kù)存
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- NCE82H140D
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- NCEP02T10
- LMPC100N20
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- LMAK20N15
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- LM3D65N03
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