| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce75ed65vt4/marking.html">NCE75ED65VT4；Package：TO-247-4L；650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offerin 文件：1.10096 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75h25/marking.html">NCE75H25；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET (Primary) Description The NCE75H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON) 文件：654.96 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75h25t/marking.html">NCE75H25T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =250A RDS(ON) 文件：693.56 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE75H35TC；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON) 文件：343.21 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75t120vt/marking.html">NCE75T120VT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat) 文件：1.26636 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75td120bt/marking.html">NCE75TD120BT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat) 文件：1.86808 Mbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75td120bt4/marking.html">NCE75TD120BT4；Package：TO-247-4L；1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat) 文件：1.53405 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE75TD120BTP；Package：TO-247P；1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat) 文件：1.51833 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75td120btp4/marking.html">NCE75TD120BTP4；Package：TO-247P-4L；1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat) 文件：1.50734 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75td120vt/marking.html">NCE75TD120VT；Package：TO-247；1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat 文件：468.49 Kbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Product status：
Production
- Package：
TO-220F
- Polarity：
P
- BVDSS(V)：
70
- ID(A)：
100
- VTH(V)：
3
- RDS(ON)@10VTyp(mΩ)：
4.8
- RDS(ON)@10VMax(mΩ)：
5.5
- VGS(th)(V)：
±20
- CISS(pF)：
4900
- QG(nC)：
100
- PD(W)：
45
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
原廠正品 |
23+ |
TO-247 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
NCE |
24+ |
TO-263 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
NA |
3560 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價 | ||
NCE |
18+ |
TO-252 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
NCE |
18+ |
TO-263 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NEC |
ROHS+Original |
NA |
3560 |
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子 |
詢價 | ||
NCE新潔能 |
21+ |
TO-263 |
25000 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-252-2(DPAK) |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-247 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 |
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