| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce70t900i/marking.html">NCE70T900I；Package：TO-251；N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. 文件：444.64 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce70t900k/marking.html">NCE70T900K；Package：TO-252；N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. 文件：444.64 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce70t900k/marking.html">NCE70T900K；Package：TO-252；N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. 文件：444.64 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce70t900r/marking.html">NCE70T900R；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. 文件：409.41 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce7190a/marking.html">NCE7190A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =71V,ID =100A RDS(ON) 文件：614.43 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/72r/marking.html">72R；Package：DFN1X1-4L；NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 60V,ID = 0.41A RDS(ON) 文件：229.49 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75ed120vt4/marking.html">NCE75ED120VT4；Package：TO-247-4L；1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology Offerin 文件：1.14451 Mbytes 頁數(shù)：9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75ed120vtp/marking.html">NCE75ED120VTP；Package：TO-247P-3L；1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology Offerin 文件：1.23845 Mbytes 頁數(shù)：9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE75ED120VTP4；Package：TO-247P-4L；1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology Offerin 文件：1.15325 Mbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce75ed65vt/marking.html">NCE75ED65VT；Package：TO-247-3L；650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offerin 文件：1.14739 Mbytes 頁數(shù)：9 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Product status：
Production
- Package：
TO-220F
- Polarity：
P
- BVDSS(V)：
70
- ID(A)：
100
- VTH(V)：
3
- RDS(ON)@10VTyp(mΩ)：
4.8
- RDS(ON)@10VMax(mΩ)：
5.5
- VGS(th)(V)：
±20
- CISS(pF)：
4900
- QG(nC)：
100
- PD(W)：
45
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
原廠正品 |
23+ |
TO-247 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
NCE |
24+ |
TO-263 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
NA |
3560 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價 | ||
NCE |
18+ |
TO-252 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
NCE |
18+ |
TO-263 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NEC |
ROHS+Original |
NA |
3560 |
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子 |
詢價 | ||
NCE新潔能 |
21+ |
TO-263 |
25000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-252-2(DPAK) |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-247 |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價 |
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