| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N- and P-Channel 20V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC 文件：597.47 Kbytes 頁數(shù)：10 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
絲?。?a target="_blank" title="Marking" href="/6602n/marking.html">6602N；Package：SOT23-6L；NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel ● VDS = 30V,ID = 3.5A RDS(ON) 文件：440.26 Kbytes 頁數(shù)：11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
Dual N-Channel 20 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC 文件：513.5 Kbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
絲?。?a target="_blank" title="Marking" href="/nce6890d/marking.html">NCE6890D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 68V,ID =90A RDS(ON) 文件：326.11 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE6890K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 68V,ID =90A RDS(ON) 文件：429.77 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE6990D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON) 文件：440.05 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：6003M；Package：SOT-89-3L；LCE N-Channel Enhancement Mode Power MOSFET 文件：994.89 Kbytes 頁數(shù)：6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：293.66 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
N-Channel 60-V (D-S) MOSFET 文件：990.28 Kbytes 頁數(shù)：6 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
Dual N-Channel 60 V (D-S) 175 ?C MOSFET 文件：1.09197 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導體 | VBSEMI |
技術參數(shù)
- Package：
SOT-23
- ESD Diode：
No
- VDS(max)：
60V
- ID(max)：
3A
- PD(max)：
1.7W
- VTH(typ)：
1.3V
- VGS(max)：
20V
- RDS(on)(typ)(@10V)：
78mΩ
- RDS(on)(typ)(@4.5V)：
95mΩ
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
無錫新潔能 |
2447 |
TO-3P |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE |
20+ |
TO-220F |
15800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NCE/新潔能 |
1925+ |
TO-252 |
12500 |
原裝現(xiàn)貨價格優(yōu)勢可供更多可出樣 |
詢價 | ||
NCE |
23+ |
TO-263 |
1600 |
正規(guī)渠道,只有原裝! |
詢價 | ||
NCE/新潔能 |
ROHS/new original |
TO-252 |
10500 |
原裝元器件供應現(xiàn)貨支持。咨詢更多現(xiàn)貨庫存,支持樣 |
詢價 | ||
NCE/新潔能 |
24+ |
TO-220 |
100000 |
原裝現(xiàn)貨 |
詢價 | ||
一級代理 |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
NCE |
2017+ |
TO-252 |
10000 |
百分百原裝正品現(xiàn)貨/含16%增值稅 |
詢價 | ||
NCE |
24+ |
TO-220 |
8000 |
原廠原裝，價格優(yōu)勢，歡迎洽談！ |
詢價 |
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