| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>NCE01P30；Package：TO-220-3L；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.10161 Mbytes 頁(yè)數(shù)：6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>NCE01P30；Package：TO-220-3L；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.10206 Mbytes 頁(yè)數(shù)：6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：NCE01P30D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：330.66 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE01P30I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：321.87 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce01p30k/marking.html">NCE01P30K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET 文件：994.89 Kbytes 頁(yè)數(shù)：6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：NCE01P30K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET 文件：1.00858 Mbytes 頁(yè)數(shù)：6 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?a target="_blank" title="Marking" href="/nce01p30d/marking.html">NCE01P30D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：330.66 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce01p30i/marking.html">NCE01P30I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：321.87 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -40A RDS(ON) 文件：933.25 Kbytes 頁(yè)數(shù)：4 Pages | BYCHIP 百域芯 | BYCHIP | ||
NCE01P30 | NCE P-Channel Enhancement Mode Power MOSFET 文件：348.33 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TAIYO |
25+ |
3225-10U |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ABCO |
24+ |
3225 |
1940 |
全新原裝數(shù)量均有多電話咨詢(xún) |
詢(xún)價(jià) | ||
ABCO |
NA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢(xún)價(jià) | |||
ABCO |
25+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | |||
NS |
23+ |
DIP |
13000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
MURATA |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
MURATA |
1201+ |
QFN金底/. |
2000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
MURATA |
1810+ |
SMD |
362 |
上傳都是百分之百進(jìn)口原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
MURATA |
23+ |
SMD |
50000 |
只做原裝正品 |
詢(xún)價(jià) |
相關(guān)芯片絲印
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更多- NCE01P30I
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- NCE042N30K
- NCE100ED65VT
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- NCE100TD120BTP
- NCE100TD120VTP4
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- LM2D16P01
- NCE14P40K
- LMTM2N15
- NCE1507AK
- LMFB20N15
- NCE1540AF
- NCE1570
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- LM2003
- NCE2013J
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- NCE2030U
- NCE20H11K
- NCE20P08J
- LM3D45P02
- NCE25TD135LP
- NCE3009S
- NCE3018AS
- LM3020Q
- LCE3025Q
- LCE3030K
- NCE3030Q
