Standup Mount

Key Features EPIC? Seal Ceramic to metal braze. Gas filled hermetic chamber protects key components. Exceeds IP69K standard Temperature Tested to temperatures up to 200°C Contacts / Form Silver / SPST / NO Coil Optional efficient two coil design with no PWM or EMI emissions. Coil suppression bui

文件：1.93565 Mbytes 頁數：3 Pages

SENSATA

森薩塔

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 頁數：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 頁數：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Low Cost, 10g, Dual Axis Accelerometer with Analog Outputs

General Description The MX210Q is a very low cost dual-axis acceleration sensor on a monolithic IC. With no moving parts, the device is extremely reliable and is manufactured on a submicron CMOS process enabling small geometries and small die size, resulting in low overall cost and high functio

文件：246.99 Kbytes 頁數：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Variable Split Band Inverter

文件：238.13 Kbytes 頁數：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 頁數：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 頁數：17 Pages

CMLMICRO

Variable Split Band Inverter

文件：238.13 Kbytes 頁數：17 Pages

CMLMICRO

MX21 系列（已淘汰）INSTA-MOUNT? 模塊化增量旋轉光學編碼器

Sensata

森薩塔

雙NMOS半橋柵極驅動器

雙N管半橋柵極驅動器是專門為上、下橋臂開關管都是N溝道VDMOS管的半橋電路結構設計的。下橋臂(低邊)直接采用芯片的供電電源驅動，上橋臂(高邊)N管采用自舉(BOST)工作原理產生超過功率管電源電壓的電壓，打開高邊功率。高邊功率管導通期間，高邊驅動電路供電完全依賴外置的自舉電容上存儲的電荷，因此該電容必須合理選擇，并且應該首先導通低邊功率管，讓BOST電容充電，利用PWM信號定期對自舉電容進行充電，以此保證高邊驅動電壓穩(wěn)定。 ● 峰值驅動能力強，可推動150A MOSFET工作在300KHz；\r\n● 集成自舉二極管，節(jié)省器件，便于排板；\r\n● 自適應死區(qū)保護技術，可根據MOSFET柵極電容大小動態(tài)調節(jié)內置死區(qū)時間，防止高、低邊功率管直通；\r\n● 內置邏輯保護，輸入同時為高時，輸出不響應；\r\n● 針對42V以內應用設計，兼顧高耐壓與低成本。;

Mixic

中科芯億達