GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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MICROSEMI

美高森美

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

Microchip

微芯科技

Phase Control Thyristor

文件：686.14 Kbytes 頁數(shù)：4 Pages

NELLSEMI

尼爾半導(dǎo)體

10 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exce

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ERICSSON

愛立信

SCR Trigger and Control Transformers

文件：33.96 Kbytes 頁數(shù)：1 Pages

RHOMBUS-IND