Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition.? The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves.? The diodes are available in a variety of microwa

Microchip

微芯科技

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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MICROSEMI

美高森美

Package：模具；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 可變電容（變?nèi)萜?，可變電抗器?描述：GAAS TVAR NON HERMETIC EPSM SMT

MICROCHIP

微芯科技

Precision, Low Noise FGA??Voltage References

Precision, Low Noise FGA? Voltage References The ISL21007 FGA? voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersil’s proprietary Floating Gate Analog technology. The ISL21007 features very low noise (4.5μVP-P for 0.1Hz to 10Hz) and v

文件：352.77 Kbytes 頁數(shù)：14 Pages

INTERSIL

Precision, Low Noise FGA??Voltage References

文件：1.16885 Mbytes 頁數(shù)：20 Pages

INTERSIL

Precision, Low Noise FGA??oltage References

文件：879.75 Kbytes 頁數(shù)：18 Pages

INTERSIL