GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

文件：154.63 Kbytes 頁數：2 Pages

MICROSEMI

美高森美

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

Microchip

微芯科技

30 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：47.66 Kbytes 頁數：3 Pages

ERICSSON

愛立信

ADAPTER-18W

文件：75.61 Kbytes 頁數：2 Pages

VOLGEN

SCR Trigger and Control Transformers

文件：33.96 Kbytes 頁數：1 Pages

RHOMBUS-IND