GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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MICROSEMI

美高森美

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

Microchip

微芯科技

4 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metal

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ERICSSON

愛立信

Ultrafast Recovery Diode

FEATURES ·Ultrafast, soft and noise-free recovery ·Combines highest recovery and reverse voltage performance ·low inductance and low capacitance allow simpler layout APPLICATIONS ·Freewheeling,Snubber,Clamp ·Inversion Welder ·PFC ·Plating Power Supply

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ISC

無錫固電

300 V ultrafast high voltage rectifier

Features ? Combines recovery and reverse voltage performance ? Ultrafast, soft and noise-free recovery ? Low inductance and low capacitance allow simpler layout ? Insulated package ISOTOP: – Insulated voltage: 2500 VRMS sine ? ECOPACK?2 compliant

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STMICROELECTRONICS

意法半導(dǎo)體