TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

文件：212.82 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC

文件：72.26 Kbytes 頁數(shù)：10 Pages

PHI

PHI

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and genera

文件：64.11 Kbytes 頁數(shù)：9 Pages

PHI

PHI

TrenchMOS? transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and

文件：171.36 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世