isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 60-V (D-S) MOSFET

FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET ? Material categorization:

文件：979.34 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

文件：275.88 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N??hannel Power MOSFET

文件：230.68 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N?Channel Power MOSFET

ONSEMI

安森美半導(dǎo)體