TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS V? Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devi

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

P-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switch

文件：955.7 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

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FAIRCHILD

仙童半導體

Power MOSFET

文件：210.68 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

Power MOSFET

文件：210.68 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThis P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.\nThese MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. ? -12 A, -60 V. RDS(ON) = 0.230 ? @ VGS = -10 V\n? Critical DC electrical parameters specified at elevated temperature.\n? Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.\n? 175°C maximum junction temperature rating.?;

ONSEMI

安森美半導體

Power MOSFET

ONSEMI

安森美半導體