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          首頁 >MTP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MTP20N06

          TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

          TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju

          文件:209.72 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP20N06V

          TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

          TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju

          文件:209.72 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP20N08

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:301.49 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTP20N08

          N-Channel Power MOSFETs, 20 A, 60-100 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

          文件:180.59 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          MTP20N10

          N-Channel Power MOSFETs, 20 A, 60-100 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

          文件:180.59 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          MTP20N10

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:300.79 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTP20N20

          TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

          TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

          文件:203.09 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP20N20E

          TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

          TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

          文件:203.09 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTP2303N3

          P-Channel 30 V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

          文件:493.04 Kbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導體

          MTP2305N3

          P-Channel 30 V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

          文件:484.54 Kbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導體

          技術(shù)參數(shù)

          • VRRM(V):

            1600

          • @TC ?(℃):

            85

          • IFSM ?(A):

            1000

          • VF (V):

            1.20

          • IF(A):

            75

          • IRRM?(μA):

            0.3

          供應(yīng)商型號品牌批號封裝庫存備注價格
          SCHURTER/碩特
          2025+
          DIP
          32000
          原裝正品現(xiàn)貨供應(yīng)商原廠渠道物美價優(yōu)
          詢價
          MOT
          06+
          TO-220
          3000
          原裝
          詢價
          MULTI
          25+
          射頻元件
          3000
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          ON
          18+
          TO-220
          41200
          原裝正品,現(xiàn)貨特價
          詢價
          ON/安森美
          2022+
          2776
          全新原裝 貨期兩周
          詢價
          24+
          聲寶
          6430
          原裝現(xiàn)貨/歡迎來電咨詢
          詢價
          ON
          21+
          TO220
          1372
          只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
          詢價
          MEMSFRON
          24+
          TO-46
          999999
          紅外溫度傳感器(溫槍)
          詢價
          MOT
          00+
          TO220/
          2110
          全新原裝進口自己庫存優(yōu)勢
          詢價
          MOTOROLA/摩托羅拉
          24+
          TO-220
          255
          現(xiàn)貨供應(yīng)
          詢價
          更多MTP供應(yīng)商 更新時間2026-1-20 17:48:00
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