N??hannel Power MOSFET

文件：250.93 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

N??hannel Power MOSFET

文件：250.93 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

N?Channel Power MOSFET

ONSEMI

安森美半導(dǎo)體

2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

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INTERSIL

2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET

The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. T

文件：306.92 Kbytes 頁數(shù)：5 Pages

INTERSIL

2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed

文件：41.54 Kbytes 頁數(shù)：5 Pages

INTERSIL