Power MOSFET 12 Amps, 60 Volts

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Power MOSFET 12 Amps, 60 Volts

文件：86.03 Kbytes 頁數(shù)：12 Pages

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N-Channel 60 V (D-S) MOSFET

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Power MOSFET 12 Amps, 60 Volts

文件：86.03 Kbytes 頁數(shù)：12 Pages

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安森美半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：1.00294 Mbytes 頁數(shù)：8 Pages

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Power MOSFET 12Amps, 60 Volts

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N-Channel 60 V (D-S) MOSFET

文件：1.00507 Mbytes 頁數(shù)：8 Pages

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TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface

N–Channel Enhancement–Mode Silicon GateTMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our\n50 and 60 volt TMOS d

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功率 MOSFET，12 A，60 V，N 溝道，DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm ? Avalanche Energy Specified\n? IDSS and VDS(on) Specified at Elevated Temperature;

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TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our\n50 and 60 volt TMOS devices. Just as with our TMOS E–FET des

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