TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

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MOTOROLA

摩托羅拉

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

恩XP

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

800V N-Channel Enhancement Mode MOSFET

FEATURES ? 1A, 800V, RDS(ON)=16?@VGS=10V, ID=0.5A ? Low ON Resistance ? Fast Switching ? Low Gate Charge ? Fully Characterized Avalanche Voltage and Current ? Specially Desigened for AC Adapter, Battery Charge and SMPS ? In compliance with EU RoHs 2002/95/EC Directives

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PANJIT

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