TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

N??hannel Power MOSFET

文件：252.78 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導體

N??hannel Power MOSFET

文件：252.78 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導體

N-Channel 200 V (D-S) MOSFET

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VBSEMI

微碧半導體

TMOS POWER FET 20 AMPERES 200 VOLTS

恩XP

N?Channel Power MOSFET

ONSEMI

安森美半導體