TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS V? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半導體

P??hannel Power MOSFET

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ONSEMI

安森美半導體

P??hannel Power MOSFET

文件：263.53 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

P?Channel Power MOSFET

ONSEMI

安森美半導體