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          首頁 >MTB15N06E>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MTB15N06E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:332.38 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTB15N06E

          TMOS POWER FET 15 AMPERES

          文件:231.14 Kbytes 頁數(shù):10 Pages

          MOTOROLA

          摩托羅拉

          MTB15N06E

          TMOS POWER FET 15 AMPERES

          恩XP

          恩XP

          MTB15N06V

          TMOS POWER FET 15 AMPERES

          TMOS V? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

          文件:274.79 Kbytes 頁數(shù):10 Pages

          MOTOROLA

          摩托羅拉

          MTB15N06V

          Power Field Effect Transistor

          文件:279.85 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導體

          MTB15N06V

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:332.39 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          供應商型號品牌批號封裝庫存備注價格
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          ON/安森美
          22+
          SOT263
          100000
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          97114
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          更多MTB15N06E供應商 更新時間2026-1-20 10:03:00
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