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          首頁(yè) >MT5C6401C-20LSLASHXT>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MT5C6401C-20LSLASHXT

          64K x 1 SRAM SRAM MEMORY ARRAY

          GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70

          文件:132.59 Kbytes 頁(yè)數(shù):10 Pages

          AUSTIN

          MT5C6401C-20L/IT

          64K x 1 SRAM SRAM MEMORY ARRAY

          GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70

          文件:132.59 Kbytes 頁(yè)數(shù):10 Pages

          AUSTIN

          MT5C6401C-20L/XT

          64K x 1 SRAM SRAM MEMORY ARRAY

          GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70

          文件:132.59 Kbytes 頁(yè)數(shù):10 Pages

          AUSTIN

          MT5C6401C-20LSLASHIT

          64K x 1 SRAM SRAM MEMORY ARRAY

          GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70

          文件:132.59 Kbytes 頁(yè)數(shù):10 Pages

          AUSTIN

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          8650
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          更多MT5C6401C-20LSLASHXT供應(yīng)商 更新時(shí)間2026-1-21 14:17:00
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